Organic Light Emitting Display Device and Method of Manufacturing the Same

ABSTRACT

An organic light emitting display device includes first and second electrodes facing each other on a substrate, a charge generation layer formed between first and second electrodes, a first light emitting unit including a first emission layer formed between the first electrode and the charge generation layer, a hole transport layer supplying holes from the first electrode to the first emission layer, and a second light emitting unit including a second emission layer formed between the second electrode and the charge generation layer, a hole transport layer supplying holes from the charge generation layer to the second emission layer, wherein a total thickness of the hole transport layer of the first light emitting unit is greater than that of the hole transport layer of the second light emitting unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 14/135,426 filed on Dec. 19, 2013, which claims the benefit ofKorean Patent Applications No. 10-2012-0155900 filed on Dec. 28, 2012,and No. 10-2013-0089383 filed on Jul. 29, 2013, all of which are herebyincorporated by reference as if fully set forth herein.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to an organic light emitting displaydevice with enhanced lifespan and efficiency and a method ofmanufacturing the same.

Discussion of the Related Art

In line with the recent information era, the display field, whichvisually displays electrical information signals, has rapidly developed.To meet such development, various flat panel display devices withexcellent performance, such as ultra-thin in thickness, lightweight, andlow power consumption, have been developed.

Examples of flat panel display devices include, without being limitedto, a liquid crystal display (LCD) device, a plasma display panel (PDP)device, a field emission display (FED) device, and an organic lightemitting device (OLED).

In particular, OLEDs, which are self-emissive devices, have fasterresponse time, higher luminous efficiency, higher luminance and widerviewing angles than other flat panel display devices.

However, OLEDs have shorter lifespan and lower efficiency than otherflat panel display devices. Therefore, there is a need to improve OLEDlifespan and efficiency.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to an organic lightemitting display device and a method of manufacturing the same thatsubstantially obviate one or more problems due to limitations anddisadvantages of the related art.

An object of the present invention is to provide an organic lightemitting display device with enhanced lifespan and efficiency and amethod of manufacturing the same.

Additional advantages, objects, and features of the invention will beset forth in part in the description which follows and in part willbecome apparent to those having ordinary skill in the art uponexamination of the following or may be learned from practice of theinvention. The objectives and other advantages of the invention may berealized and attained by the structure particularly pointed out in thewritten description and claims hereof as well as the appended drawings.

To achieve these objects and other advantages and in accordance with thepurpose of the invention, as embodied and broadly described herein, anorganic light emitting display device includes first and secondelectrodes facing each other on a substrate, a charge generation layerformed between the first and second electrodes, a first light emittingunit including a first emission layer formed between the first electrodeand the charge generation layer, a hole transport layer supplying holesfrom the first electrode to the first emission layer, and a firstelectron transport layer supplying electrons from the charge generationlayer to the first emission layer, and a second light emitting unitincluding a second emission layer formed between the second electrodeand the charge generation layer, a hole transport layer supplying holesfrom the charge generation layer to the second emission layer, and asecond electron transport layer supplying electrons from the secondelectrode to the second emission layer, wherein a total thickness of thehole transport layer of the first light emitting unit is greater thanthat of the hole transport layer of the second light emitting unit.

The hole transport layer of the first light emitting unit may include afirst hole transport layer and a second hole transport layer that isthinner than the first hole transport layer, and the hole transportlayer of the second light emitting unit may include a third holetransport layer and a fourth hole transport layer that is thinner thanthe third hole transport layer, wherein a sum of thicknesses of thefirst and second hole transport layers is greater than a sum ofthicknesses of the third and fourth hole transport layers.

The thickness of the first hole transport layer may be greater than thethickness of the third hole transport layer.

The first hole transport layer may have a thickness of 700 Å to 1200 Å,the second hole transport layer may have a thickness of 150 Å to 250 Å,the third hole transport layer may have a thickness of 250 Å to 350 Å,and the fourth hole transport layer may have a thickness of 100 Å to 150Å.

A hole mobility of the first hole transport layer may be higher thanthat of the second hole transport layer, and a hole mobility of thethird hole transport layer may be higher than that of the fourth holetransport layer.

The hole mobility of the third hole transport layer may be higher thanthat of the first hole transport layer.

The organic light emitting display device may further include a secondcharge generation layer formed on the second electron transport layer ofthe second light emitting unit and a third light emitting unit formedbetween the second charge generation layer and the second electrode,wherein the third light emitting unit includes a third emission layerformed between the second electrode and the second charge generationlayer, a hole transport layer supplying holes from the second chargegeneration layer to the third emission layer, and a third electrontransport layer supplying electrons to the third emission layer, and atotal thickness of the hole transport layer of the first light emittingunit is greater than that of the hole transport layer of the third lightemitting unit, and the thickness of the hole transport layer of thethird light emitting unit is greater than that of the hole transportlayer of the second light emitting unit.

The thickness of the hole transport layer of the first light emittingunit may be between 1050 Å and 1450 Å, the thickness of the holetransport layer of the second light emitting unit may be between 200 and600 Å, and the thickness of the hole transport layer of the third lightemitting unit may be between 800 and 1000 Å.

Two of the first, second and third emission layers may realize bluecolor, and the other thereof may realize green color.

In another aspect of the present invention, a method of manufacturing anorganic light emitting display device includes forming a first electrodeon a substrate; forming, on the first electrode, a first light emittingunit including a first emission layer, a hole transport layer supplyingholes from the first electrode to the first emission layer, and a firstelectron transport layer supplying electrons to the first emissionlayer, forming a charge generation layer supplying the electrons to thefirst electron transport layer, on the first light emitting unit,forming, on the charge generation layer, a second light emitting unitincluding a second emission layer, a hole transport layer supplyingholes from the charge generation layer to the second emission layer, anda second electron transport layer supplying electrons to the secondemission layer, and forming a second electrode supplying the electronsto the second electron transport layer, on the second light emittingunit, wherein a total thickness of the hole transport layer of the firstlight emitting unit is greater than that of the hole transport layer ofthe second light emitting unit.

The method may further include forming, on the second light emittingunit, a second charge generation layer supplying the electrons to thesecond electron transport layer and forming, on the second chargegeneration layer, a third light emitting unit including a third emissionlayer, a hole transport layer supplying holes from the second chargegeneration layer to the third emission layer, and a third electrontransport layer supplying electrons to the third emission layer, whereina thickness of the hole transport layer of the first light emitting unitis greater than that of the hole transport layer of the third lightemitting unit, and the thickness of the hole transport layer of thethird light emitting unit is greater than that of the hole transportlayer of the second light emitting unit.

It is to be understood that both the foregoing general description andthe following detailed description of the present invention areexemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiment(s) of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings:

FIG. 1 is a sectional view of an organic light emitting display deviceaccording to a first embodiment of the present invention;

FIG. 2 is a band diagram illustrating the organic light emitting displaydevice illustrated in FIG. 1;

FIG. 3 is a flowchart for explaining a method of manufacturing theorganic light emitting display device according to the first embodimentof the present invention;

FIG. 4 is a sectional view of an organic light emitting display deviceaccording to a second embodiment of the present invention;

FIG. 5 is a band diagram illustrating the organic light emitting displaydevice illustrated in FIG. 4;

FIG. 6 illustrates electroluminescence intensities of green light andblue light generated from first, second and third emission layersillustrated in FIGS. 4 and 5;

FIGS. 7A and 7B are graphs for explaining an electroluminescence peak ofthe organic light emitting display device of FIG. 4;

FIG. 8 is a flowchart for explaining a method of manufacturing theorganic light emitting display device according to the second embodimentof the present invention;

and

FIG. 9 is a sectional view of the organic light emitting display deviceaccording to the first or second embodiment of the present inventionincluding color filters.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to the preferred embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers will be usedthroughout the drawings to refer to the same or like parts.

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings.

FIG. 1 is a sectional view of an organic light emitting display deviceaccording to a first embodiment of the present invention. FIG. 2 is aband diagram illustrating the organic light emitting display deviceillustrated in FIG.

1.

Referring to FIGS. 1 and 2, the organic light emitting display deviceincludes first and second electrodes 102 and 104 facing each other,first and second light emitting units 110 and 120 disposed between thefirst and second electrodes 102 and 104, and a charge generation layer130 disposed between the first and second light emitting units 110 and120. In the present embodiment, two light emitting units are formed, butembodiments are not limited thereto. That is, three or more lightemitting units may be formed.

Any one of the first and second electrodes 102 and 104 is formed as asemi-transparent electrode and the other thereof is formed as areflective electrode. When the first electrode 102 is a semi-transparentelectrode and the second electrode 104 is a reflective electrode, theorganic light emitting display device is embodied as a bottom emissiontype that emits light in a bottom direction. When the second electrode104 is a semi-transparent electrode and the first electrode 102 is areflective electrode, the organic light emitting display device isembodied as a top emission type that emits light in a top direction. Inthe present invention, a case in which the first electrode 102 as ananode is formed as a reflective electrode and the second electrode 104as a cathode is formed as a semi-transparent electrode will be describedby way of example.

The first electrode 102 is formed as multiple layers including a metallayer formed of aluminum (Al) or an Al alloy (e.g., AlNd) and atransparent layer formed of indium tin oxide (ITO), indium zinc oxide(IZO), or the like and serves as a reflective electrode.

The second electrode 104 is formed as a single layer or multiple layers,and each layer constituting the second electrode 104 is formed of ametal, an inorganic material, a mixture of metals, a mixture of a metaland an inorganic material, or a mixture thereof. When each layer isformed of the mixture of a metal and an inorganic material, a mix ratiothereof is 10:1 to 1:10 and, when each layer is formed of the mixture ofmetals, a mix ratio thereof is 10:1 to 1:10. The metal constituting thesecond electrode 104 may be Ag, Mg, Yb, Li, or Ca, the inorganicmaterial constituting the second electrode 104 may be Li₂O, CaO, LiF, orMgF₂, and the metal and the inorganic material facilitate migration ofelectrons and thus enable a large amount of electrons to be supplied toan emission layer 110.

The charge generation layer 130 generates and separates n-type charges,i.e., electrons, and p-type charges, i.e., holes. For this operation,the charge generation layer 130 includes an N-type charge generationlayer 130 a formed on a first electron transport layer 118 of the firstlight emitting unit 110 and a P-type charge generation layer 130 bformed below a third hole transport layer 124 a of the second lightemitting unit 120. The N-type charge generation layer 130 a injectselectrons into the first light emitting unit 110, and the injectedelectrons and holes transferred from the first electrode 102 arecombined in a first emission layer 116 of the first light emitting unit110, forming excitons and releasing energy, whereby visible light isemitted. The P-type charge generation layer 130 b injects holes to thesecond light emitting unit 120, and the injected holes and electronstransferred from the second electrode 104 are combined in a secondemission layer 126, forming excitons and releasing energy, wherebyvisible light is emitted.

In this regard, the first emission layer 116 may include a fluorescentblue dopant and host to emit blue light, and the second emission layer126 may include a phosphorescent yellow-green dopant and host to emitorange light, which enables emission of white light. In addition, whitelight may be generated using other fluorescent dopants andphosphorescent dopants.

The first light emitting unit 110 is formed between the first electrode102 and the charge generation layer 130. The first light emitting unit110 includes a hole injection layer 112, first and second hole transportlayers 114 a and 114 b, the first emission layer 116, and a firstelectron transport layer 118 that are sequentially formed on the firstelectrode 102. The first and second hole transport layers 114 a and 114b supply holes from the first electrode 102 to the first emission layer116, the first electron transport layer 118 supplies electrons from thecharge generation layer 130 to the first emission layer 116, and theholes supplied via the first and second hole transport layers 114 a and114 b and the electrons supplied via the first electron transport layer118 are recombined in the first emission layer 116, whereby light isemitted.

In particular, the first hole transport layer 114 a supplies holes fromthe first electrode 102 to the second hole transport layer 114 b andcontrols cavity of blue light generated from the first light emittingunit 110. The first hole transport layer 114 a is formed of a materialwith less variation in hole mobility (5.0×10⁻³ Vs/cm²) according tothickness. For example, the first hole transport layer 114 a is formedof at least one material selected from among rubrene, NPB, TBP, TAPC,TCTA, and 2-TMATA. In this regard, the first hole transport layer 114 ahas a thickness of about 700 Å to about 1200 Å.

The second hole transport layer 114 b supplies holes from the first holetransport layer 114 a to the first emission layer 116 and controlscavity of blue light generated from the first light emitting unit 110.In addition, the second hole transport layer 114 b blocks electronssupplied to the first emission layer 116. In this regard, the secondhole transport layer 114 b is formed of a material having a lower holemobility than that of the first hole transport layer 114 a and blockselectrons so that electrons supplied to the first emission layer 116 arenot transferred to other layers and combined with holes in the firstemission layer 116. For example, the second hole transport layer 114 bis formed of at least one of rubrene, NPB, TBP, TAPC, TCTA, and 2-TMATA.

Meanwhile, since the hole mobility of the second hole transport layer114 b is lower than that of the first hole transport layer 114 a, whenthe thickness of the second hole transport layer 114 b increases,driving voltage increases and lifespan decreases. Thus, the second holetransport layer 114 b has a thickness of about 150 Å to about 250 Å,which is smaller than that of the first hole transport layer 114 a.

The second light emitting unit 120 is formed between the secondelectrode 104 and the charge generation layer 130. The second lightemitting unit 120 includes third and fourth hole transport layers 124 aand 124 b, the second emission layer 126, and a second electrontransport layer 128 that are sequentially formed on the chargegeneration layer 130. The third and fourth hole transport layers 124 aand 124 b supply holes from the charge generation layer 30 to the secondemission layer 126, the second electron transport layer 128 supplieselectrons from the second electrode 132 to the second emission layer126, and the holes supplied via the third and fourth hole transportlayers 124 a and 124 b and the electrons supplied via the secondelectron transport layer 128 are recombined in the second emission layer126, thereby generating light.

In particular, the third hole transport layer 124 a supplies holes fromthe charge generation layer 130 to the fourth hole transport layer 124 band controls cavity of orange light generated from the second lightemitting unit 120. Since the holes transferred from the chargegeneration layer 130 are injected into the third hole transport layer124 a and thus the third hole transport layer 124 a is formed of amaterial having a higher hole mobility than that of the first and secondhole transport layers 114 a and 114 b. For example, the third holetransport layer 124 a is formed of at least one material selected fromamong rubrene, NPB, TBP, TAPC, TCTA, and 2-TMATA. In this regard, thethird hole transport layer 124 a has a thickness of about 250 Å to about350 Å.

The fourth hole transport layer 124 b supplies holes from the third holetransport layer 124 a to the second emission layer 126 and controlscavity of orange light generated from the second light emitting unit120. In addition, the fourth hole transport layer 124 b has a highertriplet energy level T1 (e.g., 2.5) than that of the second emissionlayer 126 so as to block electrons supplied to the second emission layer126.

In this regard, the fourth hole transport layer 124 b is formed of amaterial having a lower hole mobility than that of the third holetransport layer 124 a. For example, the fourth hole transport layer 124b is formed of at least one of rubrene, NPB, TBP, TAPC, TCTA, and2-TMATA.

Meanwhile, since the hole mobility of the fourth hole transport layer124 b is lower than that of the third hole transport layer 124 a, whenthe thickness of the fourth hole transport layer 124 b increases,driving voltage increases and lifespan decreases. Thus, the fourth holetransport layer 124 b has a thickness of about 100 Å to about 150 Å,which is smaller than the thickness of the third hole transport layer124 a.

In the organic light emitting display device according to the firstembodiment of the present invention, the thicknesses of the first,second, third and fourth hole transport layers 114 a, 114 b, 124 a and124 b satisfy conditions shown in Equation 1 below.

TT1(=T1+T2)>TT2(=T3+T4)   [Equation 1]

In Equation 1, T1 denotes the thickness of the first hole transportlayer 114 a, T2 denotes the thickness of the second hole transport layer114 b, T3 denotes the thickness of the third hole transport layer 124 a,T4 denotes the thickness of the fourth hole transport layer 124 b, TT1denotes a sum of the thicknesses of the first and second hole transportlayers 114 a and 114 b, i.e., a total thickness of a hole transportlayer of the first light emitting unit 110, and TT2 denotes a sum of thethicknesses of the third and fourth hole transport layers 124 a and 124b, i.e., a total thickness of a hole transport layer of the second lightemitting unit 120.

When satisfying the conditions shown in Equation 1, each of the bluelight generated from the first light emitting unit 110 and the orangelight generated from the second light emitting unit 120 causesconstructive interference and thus luminous efficiency may be optimized,which results in enhanced viewing angle.

Table 1 below shows measurement results of voltage (V), colorcoordinates (CIE_x,CIE_y), and efficiency (cd/A) of structures ofcomparative examples and examples according to the thicknesses of thefirst and second hole transport layers 114 a and 114 b, and Table 2below shows measurement results of voltage (V), color coordinates(CIE_x,CIE_y), and efficiency (cd/A) of structures of comparativeexamples and examples according to the thicknesses of the third andfourth hole transport layers 124 a and 124 b. In Tables 1 and 2, HTL1,HTL2, HTL3, and HTL4 respectively denote the first, second, third andfourth hole transport layers 114 a, 114 b, 124 a and 124 b.

TABLE 1 structure HTL1 HTL2 HTL3 HTL4 [Å] [Å] [Å] [Å] V CIE_x CIE_yCd/ACIE_xCIE_ycd/A Comparative 1350 0 300 150 7.5 0.305 0.319 50 ExampleComparative 1300 50 7.5 0.307 0.321 68 Example Example 1200 150 7.50.306 0.322 75 Example 1000 350 7.8 0.309 0.32 76 Example 800 550 8.50.31 0.321 77 Comparative 600 750 10 0.311 0.329 76 Example Comparative400 950 12 0.309 0.328 71 Example Comparative 200 1150 12 0.307 0.325 69Example Comparative 0 1350 12 0.305 0.32 70 Example

TABLE 2 structure HTL1 HTL2 HTL3 HTL4 [Å] [Å] [Å] [Å] V CIE_x CIE_yCd/ACIE_xCIE_ycd/A Comparative 1200 150 450 0 7.5 0.311 0.319 65 ExampleComparative 400 50 7.5 0.308 0.322 68 Example Comparative 350 100 7.50.309 0.329 72 Example Example 300 150 7.5 0.306 0.322 75 Comparative250 200 7.7 0.308 0.33 76 Example Comparative 200 250 7.9 0.311 0.331 77Example Comparative 150 300 8 0.301 0.325 77 Example Comparative 100 35010 0.311 0.326 77 Example Comparative 50 400 10 0.315 0.327 70 ExampleComparative 0 450 10 0.312 0.33 70 Example

As shown in Table 1, as the thickness of the first hole transport layer114 a decreases and the thickness of the second hole transport layer 114b increases, driving voltage increases and, as shown in Table 2, as thethickness of the third hole transport layer 124 a decreases and thethickness of the fourth hole transport layer 124 b increases, drivingvoltage increases. Accordingly, as shown in Tables 1 and 2, thestructures of examples in which the first hole transport layer 114 a isformed to a thickness of about 700 Å to about 1200 Å, the second holetransport layer 114 b is formed to a thickness of about 150 Å to about250 Å, which is smaller than that of the first hole transport layer 114a, the third hole transport layer 124 a is formed to a thickness ofabout 250 Å to about 350 Å, and the fourth hole transport layer 124 b isformed to a thickness of about 100 Å to about 150 Å, which is smallerthan that of the third hole transport layer 124 a have enhancedcharacteristics, i.e., voltage (V), color coordinates (CIE_x,CIE_y), andefficiency (cd/A), when compared to those of the structures ofcomparative examples. In addition, in embodiments of the presentinvention, when efficiency increases as described above, driving currentdecreases and the same brightness as that of a conventional organiclight emitting display device may be achieved at a relatively lowcurrent. Accordingly, the organic light emitting display deviceaccording to the present invention also has enhanced lifespan.

FIG. 3 is a flowchart for explaining a method of manufacturing theorganic light emitting display device according to the first embodimentof the present invention.

First, the first electrode 102 is formed on the substrate 101 (stepS10). The hole injection layer 112, the first and second hole transportlayers 114 a and 114 b, the first emission layer 116, and the firstelectron transport layer 118 are sequentially stacked on the substrate101 with the first electrode 122 formed thereon by thermal deposition,sputtering, or a combination thereof to form the first light emittingunit 110 (step S12). Thereafter, the charge generation layer 130 isformed on the first light emitting unit 110 (step S14). Next, the thirdand fourth hole transport layers 124 a and 124 b, the second emissionlayer 126, and the second electron transport layer 128 are sequentiallystacked on the substrate 101 with the charge generation layer 130 formedthereon by thermal deposition, sputtering, or a combination thereof toform the second light emitting unit 120 (step S16). Thereafter, thesecond electrode 104 is formed on the substrate 101 with the secondlight emitting unit 120 formed thereon (step S18).

FIG. 4 is a block diagram illustrating an organic light emitting displaydevice according to a second embodiment of the present invention. FIG. 5is a band diagram illustrating the organic light emitting display deviceillustrated in FIG. 4.

The organic light emitting display device of FIGS. 4 and 5 includes thesame elements as those of the organic light emitting display device ofFIG. 1, except that the organic light emitting display device of FIGS. 4and 5 further includes a second charge generation layer 132 including anN-type charge generation layer 132 a and a P-type charge generationlayer 132 b and a third light emitting unit 140. Thus, a detaileddescription of the same elements will be omitted herein.

That is, the organic light emitting display device of FIG. 4 includesthe first and second electrodes 102 and 104 facing each other, thefirst, second and third light emitting units 110, 120 and 140 formedbetween the first and second electrodes 102 and 104, a first chargegeneration layer 130 formed between the first and second light emittingunits 110 and 120, and the second charge generation layer 132 formedbetween the second and third light emitting units 120 and 140.

The first light emitting unit 110 includes the hole injection layer 112,a first hole transport layer 214, the first emission layer 116 to emitblue light, and the first electron transport layer 118 that aresequentially formed on the first electrode 102. In particular, the firsthole transport layer 214 supplies holes from the first electrode 102 tothe first emission layer 116 and controls cavity of blue light generatedfrom the first light emitting unit 110.

The second light emitting unit 120 is formed between the first and thirdlight emitting units 110 and 140. The second light emitting unit 120includes a second hole transport layer 224, the second emission layer126 to emit green light, and the second electron transport layer 128that are sequentially formed on the first charge generation layer 130disposed on the first light emitting unit 110. In particular, the secondhole transport layer 224 supplies holes from the first charge generationlayer 130 to the second emission layer 126 and controls cavity of greenlight generated from the second light emitting unit 120.

The third light emitting unit 140 is formed between the second chargegeneration layer 132 and the second electrode 104. The third lightemitting unit 140 includes a third hole transport layer 244, a thirdemission layer 146 to emit blue light, and a third electron transportlayer 148 that are sequentially formed on the second charge generationlayer 132. In particular, the third hole transport layer 244 suppliesholes from the second charge generation layer 132 to the third emissionlayer 146 and controls cavity of blue light generated from the thirdlight emitting unit 140.

In particular, blue light generated from the first and third lightemitting units 110 and 140 is repeatedly refracted and reflected withina resonance region between the first and second electrodes 102 and 104.That is, due to a microcavity effect whereby blue light generated fromeach of the first and third emission layers 116 and 146 and blue lightreflected by the first electrode 102 undergo constructive interference,as illustrated in FIG. 6, blue electroluminescence intensity (BEI)characteristics are exhibited within the resonance region between thefirst and second electrodes 102 and 104. The BEI has plural blueelectroluminescence peaks within the resonance region between the firstand second electrodes 102 and 104.

In addition, green light generated from the second light emitting unit120 is repeatedly refracted and reflected within the resonance regionbetween the first and second electrodes 102 and 104. That is, due to amicrocavity effect whereby green light generated from the secondemission layer 126 and green light reflected by the first electrode 102undergo constructive interference, as illustrated in FIG. 6, greenelectroluminescence intensity (GEI) characteristics are exhibited withinthe resonance region between the first and second electrodes 102 and104. In this regard, since green light has a longer peak wavelength thanthat of blue light, the GEI has a smaller number of plural greenelectroluminescence peaks than that of the BEI within the resonanceregion between the first and second electrodes 102 and 104.

In this regard, when blue emission layers (e.g., the first and thirdemission layers 116 and 146) are disposed at a blue electroluminescencepeak position and a green emission layer (e.g., the second emissionlayer 126) is disposed at a green electroluminescence peak position,highest luminous efficiency may be obtained.

Accordingly, a position of the first emission layer 116 to generate bluelight is determined by adjusting the thicknesses of the hole injectionlayer 112 and the first hole transport layer 214 that are disposed belowthe first emission layer 116. Preferably, a distance d1 from an uppersurface of the first electrode 102 to a lower surface of the firstemission layer 116, i.e., a sum of the thicknesses of the hole injectionlayer 112 and the first hole transport layer 214 that are disposed belowthe first emission layer 116, is between 1200 and 1400 Å.

A position of the second emission layer 126 to generate green light isdetermined by adjusting the thicknesses of the electron transport layer118, the first charge generation layer 130, and the second holetransport layer 224, disposed between the first and second emissionlayers 116 and 126. Preferably, a distance d2 from an upper surface ofthe first emission layer 116 to a lower surface of the second emissionlayer 126, i.e., a sum of the thicknesses of the electron transportlayer 118, the first charge generation layer 130, and the second holetransport layer 224, disposed between the first and second emissionlayers 116 and 126, is between 400 and 600 Å.

In addition, a position of the third emission layer 146 to generate bluelight is determined by adjusting the thicknesses of the electrontransport layer 128, the second charge generation layer 132, and thethird hole transport layer 244, disposed between the second and thirdemission layers 126 and 146. Preferably, a distance d3 from an uppersurface of the second emission layer 126 to a lower surface of the thirdemission layer 146, i.e., a sum of the thicknesses of the electrontransport layer 128, the second charge generation layer 132, and thethird hole transport layer 244, disposed between the first and secondemission layers 116 and 126, is between 1210 and 1350 Å.

In particular, to determine the positions of the first, second and thirdemission layers 116, 126 and 146 since driving voltage may increase whenthe thicknesses of the electron transport layers 118, 128 and 148 areadjusted, it is preferable to adjust the thicknesses of the first,second and third hole transport layers 214, 224 and 244 that do notaffect driving voltage.

That is, in the organic light emitting display device according to thepresent invention, the thicknesses of the first, second and third holetransport layers 214, 224 and 244 satisfy the conditions shown inEquation 2 below.

TT1>TT3>TT2   [Equation 2]

In Equation 2, TT1 denotes the thickness of the first hole transportlayer 214 of the first light emitting unit 110, TT2 denotes thethickness of the second hole transport layer 224 of the second lightemitting unit 120, and TT3 denotes the thickness of the third holetransport layer 244 of the third light emitting unit 140. In thisregard, the thickness of the first hole transport layer 214 is greaterthan about 1050 Å to less than 1450 Å, the thickness of the second holetransport layer 224 is 200 Å to 600 Å, and the thickness of the thirdhole transport layer 244 is 800 Å to 1000 Å.

Accordingly, as illustrated in FIG. 6, the first emission layer 116 ofthe first light emitting unit 110 is located at a secondelectroluminescence peak of the BEI wavelength, the second emissionlayer 126 of the second light emitting unit 120 is located at a secondelectroluminescence peak of the GEI wavelength, and the third emissionlayer 146 of the third light emitting unit 140 is located at a thirdelectroluminescence peak of the BEI wavelength.

Consequently, each of the blue light generated from the first lightemitting unit 110, the green light generated from the second lightemitting unit 120, and the blue light generated from the third lightemitting unit 140 causes constructive interference, thereby generatingwhite light having a maximum luminous efficiency.

Meanwhile, although a case in which the first and third emission layers116 and 146 generate blue light and the second emission layer 126generates green light has been described in the second embodiment of thepresent invention by way of example, a structure in which the firstemission layer 116 generates green light and the second and thirdemission layers 126 and 146 generate blue light or a structure in whichthe first and second emission layers 116 and 126 generate blue light andthe third emission layer 146 generates green light may also be applied.

In addition, a position of each of the first, second and third holetransport layers 214, 224 and 244, i.e., a position of a lower surfaceof each of the first, second and third hole transport layers 214, 224and 244, may vary according to the thickness of the first electrode 102formed on the substrate 101, but a thickness order of the first, secondand third hole transport layers 214, 224 and 244 is not changed.

Table 3 shows efficiency characteristics of the organic light emittingdisplay device according to the second embodiment of the presentinvention and organic light emitting display devices of comparativeexamples 1 and 2.

TABLE 3 Comparative Comparative Example 2 Example 1 Example 2 [TT1 >TT3 > [TT3 > TT1 > [TT1 > TT2 > TT2] TT2] TT3] A B C D E F G TT1 [Å]1150 1250 1350 1050 750 1250 1250 TT2 [Å] 250 250 250 250 250 650 750TT3 [Å] 1050 950 850 1150 1450 550 450 Efficiency 75 80 74 65 66 30 40[cd/A]

As shown in Table 3 and FIG. 7A, the organic light emitting displaydevice of comparative example 1 in which the thickness TT3 of a thirdhole transport layer of a third light emitting unit is the greatest andthe thickness TT2 of a second hole transport layer of a second lightemitting unit is the smallest has a smaller electroluminescence peakvalue than that of the organic light emitting display device accordingto the second embodiment of the present invention and thus exhibitsreduced efficiency characteristics, by 20% or greater.

In addition, as shown in Table 3 and FIG. 7B, the organic light emittingdisplay device of comparative example 2 in which the thickness TT1 of afirst hole transport layer of a third light emitting unit is thegreatest and the thickness TT3 of a third hole transport layer of athird light emitting unit is the smallest has a smallerelectroluminescence peak value than that of the organic light emittingdisplay device according to the second embodiment of the presentinvention and thus exhibits reduced efficiency characteristics, by 20%or greater.

FIG. 8 is a flowchart for explaining a method of manufacturing theorganic light emitting display device according to the second embodimentof the present invention.

First, the first electrode 102 is formed on the substrate 101 (stepS20). The hole injection layer 112, the first hole transport layer 214,the first emission layer 116, and the first electron transport layer 118are sequentially stacked on the substrate 101 with the first electrode122 formed thereon by thermal deposition, sputtering, or a combinationthereof to form the first light emitting unit 110 (step S22).Thereafter, the first charge generation layer 130 is formed on the firstlight emitting unit 110 (step S24). Next, the second hole transportlayer 224, the second emission layer 126, and the second electrontransport layer 128 are sequentially stacked on the substrate 101 withthe first charge generation layer 130 formed thereon by thermaldeposition, sputtering, or a combination thereof to form the secondlight emitting unit 120 (step S26). Thereafter, the second chargegeneration layer 132 is formed on the second light emitting unit 120(step S28). The third hole transport layer 244, the third emission layer146, and the third electron transport layer 148 are sequentially stackedon the substrate 101 with the second charge generation layer 132 formedthereon by thermal deposition, sputtering, or a combination thereof toform the third light emitting unit 140 (step S30). The second electrode104 is formed on the substrate 101 with the third light emitting unit140 formed thereon (step S32).

Although a case in which the first, second and third hole transportlayers 214, 224 and 244 of the respective first, second and third lightemitting units 110, 120 and 140 have a single layer structure has beendescribed by way of example in the second embodiment of the presentinvention, as in the first embodiment of the present invention, thefirst, second and third hole transport layers 214, 224 and 244 of therespective first, second and third light emitting units 110, 120 and 140may have a multilayer structure.

Meanwhile, the organic light emitting display devices according to thefirst and second embodiments of the present invention may be applied toa structure having red, green and blue color filters 150R, 150G and 150Bas illustrated in FIG. 9. That is, white light generated via the firstand second light emitting units 110 and 120 illustrated in FIG. 1 orwhite light generated via the first, second and third light emittingunits 110, 120 and 140 illustrated in FIG. 4 is emitted as red lightwhile passing through a sub-pixel region provided with the red colorfilter 150R, is emitted as green light while passing through a sub-pixelregion provided with the green color filter 150G, is emitted as bluelight while passing through a sub-pixel region provided with the bluecolor filter 150B, and is emitted unchanged while passing through asub-pixel region not provided with a color filter.

As is apparent from the foregoing description, according to organiclight emitting display devices according to the present invention andmethods of manufacturing the same, a hole transport layer included ineach of a plurality of light emitting units is formed to differentthicknesses. Accordingly, the organic light emitting display devicemanufactured using the method has increased efficiency and lifespan andenhanced viewing angle.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present inventionwithout departing from the spirit or scope of the inventions. Thus, itis intended that the present invention covers the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

What is claimed is:
 1. An organic light emitting display devicecomprising: a first electrode and a second electrode facing each otheron a substrate; a first charge generation layer and a second chargegeneration layer between the first electrode and the second electrode; afirst light emitting unit comprising a first emission layer between thefirst electrode and the first charge generation layer, a first holetransport layer supplying holes from the first electrode to the firstemission layer, and a first electron transport layer supplying electronsfrom the first charge generation layer to the first emission layer; asecond light emitting unit comprising a second emission layer betweenthe second electrode and the first charge generation layer, a secondhole transport layer supplying holes from the first charge generationlayer to the second emission layer, and a second electron transportlayer supplying electrons from the second electrode to the secondemission layer; and a third light emitting unit comprising a thirdemission layer formed between the second electrode and the second chargegeneration layer, a third hole transport layer supplying holes from thesecond charge generation layer to the third emission layer, and a thirdelectron transport layer supplying electrons to the third emissionlayer, and wherein a total thickness of the first hole transport layerof the first light emitting unit is greater than a thickness of thethird hole transport layer of the third light emitting unit, and thethickness of the third hole transport layer of the third light emittingunit is greater than a thickness of the second hole transport layer ofthe second light emitting unit.
 2. The organic light emitting displaydevice according to claim 1, wherein the thickness of the first holetransport layer of the first light emitting unit is greater than 1050 Åand less than 1450 Å, wherein the thickness of the second hole transportlayer of the second light emitting unit is between 200 and 600 Å, andthe thickness of the third hole transport layer of the third lightemitting unit is between 800 and 1000 Å.
 3. The organic light emittingdisplay device according to claim 1, wherein two of the first, second,and third emission layers realize blue color, and the other thereofrealizes green color.